The thermal expansion coefficient of these LTCC substrates is adjusted for use as wafer-level packaging substrates. The substrate surface has bumps for electrical connections, and CSP (chip-scale package) can be easily assembled by directly bonding to silicon wafers. Ideal for MEMS and semiconductor ceramic packages with a small number of leads.

Features
Benefits of using ceramic wafers that can be anodic bonded to silicon
Miniature, thin, and lightweight devices are available
Lower cost, more units per wafer, and simple assembly process
Faster development phase without designing electrical contacts
Sealed packaging technology with electrical connections (etched through-hole wafers)

Material Characteristics

ITEM	UNIT	TEST CONDITIONS	VALUES
DENSITY	g/cm3	―	2.43
THERMAL EXPANSION COEFFICIENT	ppm/℃	―	3.4
BENDING STRENGTH	MPa	POST-FIRING	150
		POST-POLISH	220
YOUNG MODULUS	GPa	―	81
POISSON COEFFICIENT	―	―	0.23
THERMAL CONDUCTIVITY	W/(m・K)	―	1.67
INSULATION RESISTANCE	Ω・cm	31℃ 500VDC	6.5×1012
DIELECTRIC CONSTANT	―	1MHz	5.4
		10GHz	5.1
DIELECTRIC LOSS	―	1MHz	0.01
		10GHz	0.01

Design Guidelines

ITEM		STANDARD	CUSTOM
LAYER THICKNESS	mm	0.07(0.05～0.07)	0.05(0.035～0.05)
MAX DIMENSIONS	inch	Φ4	Φ6
MIN THICKNESS	mm	0.25 @3inch 0.3 @4inch	0.25 @3inch 0.3 @4inch 0.4 @6inch
CAVITY DEPTH	mm	0.025(0.003～0.05)	0.025(0.003～0.05)
OF LAYERS	Layer	MULTILAYER CIRCUITS AVAILABLE	MULTILAYER CIRCUITS AVAILABLE
VIA POSITION TOLERANCE	μm	4 inch WAFER:±135	MEMS SIDE : STANDARD±50 PREMIUM±35
		0.2% OF WAFER RADIUS +35	TERMINAL SIDE: ±50
VIA DIAMETER	mm	0.1±0.03	0.11±0.03
MIN VIA PICTH	mm	0.25	0.25
MIN VIA PITCH (ETCHED VIA BUMP)	mm	0.3	0.3
MIN INTERNAL VIA PAD DIAMETER	mm	0.15	0.15
MIN LINE WIDTH	mm	0.075	0.075
MIN LINE SPACE	mm	0.075	0.075
MIN LINE/VIA PAD DISTANCE	mm	0.1	0.1
MIN VIA EDGE/CAVITY EDGE DISTANCE	mm	0.2	0.2
MIN VIA EDGE/SUBSTRATE EDGE DISTANCE	mm	0.2	0.2
MIN LINE SUBSTRATE EDGE DISTANCE	mm	0.15	0.15

KKPCB welcomes your inquiries!